Licht-im-Terrarium: Literaturdatenbank |
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Nakamura, S., & Krames, M. R. (2013). History of gallium–nitride-based light-emitting diodes for illumination. Proceedings of the IEEE, 101(10), 2211–2220. Added by: Sarina (2021-10-13 09:05:09) |
Resource type: Journal Article DOI: 10.1109/JPROC.2013.2274929 ID no. (ISBN etc.): 1558-2256 BibTeX citation key: Nakamura2013 View all bibliographic details ![]() |
Categories: Englisch = English Creators: Krames, Nakamura Collection: Proceedings of the IEEE |
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Abstract |
The history of development for gallium-nitride-based light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology: first, the key breakthroughs that enabled the development of GaN-based devices on foreign substrates like sapphire (first-generation LEDs), and, second, a new wave of devices benefiting from developments in GaN substrate manufacturing, which has led to native bulk-GaN-based LEDs with unprecedented performance characteristics that portend a disruptive shift in LED output power density and the corresponding cost of generating light.
Added by: Sarina |