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Nakamura, S., & Krames, M. R. (2013). History of gallium–nitride-based light-emitting diodes for illumination. Proceedings of the IEEE, 101(10), 2211–2220. 
Added by: Sarina (2021-10-13 09:05:09)   
Resource type: Journal Article
DOI: 10.1109/JPROC.2013.2274929
ID no. (ISBN etc.): 1558-2256
BibTeX citation key: Nakamura2013
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Categories: Englisch = English
Creators: Krames, Nakamura
Collection: Proceedings of the IEEE
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Abstract
The history of development for gallium-nitride-based light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology: first, the key breakthroughs that enabled the development of GaN-based devices on foreign substrates like sapphire (first-generation LEDs), and, second, a new wave of devices benefiting from developments in GaN substrate manufacturing, which has led to native bulk-GaN-based LEDs with unprecedented performance characteristics that portend a disruptive shift in LED output power density and the corresponding cost of generating light.
Added by: Sarina  
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