Licht-im-Terrarium: Literaturdatenbank

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Glaab, J., Ruschel, J., Kolbe, T., Knauer, A., Rass, J., & Cho, H. K., et al. (2019). Degradation of (in)algan-based uvb leds and migration of hydrogen. IEEE Photonics Technology Letters, 31(7), 529–532. 
Added by: Sarina (2021-10-13 09:02:27)   
Resource type: Journal Article
DOI: 10.1109/LPT.2019.2900156
ID no. (ISBN etc.): 1941-0174
BibTeX citation key: Glaab2019
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Categories: Englisch = English
Creators: Cho, Einfeldt, Glaab, Knauer, Kneissl, Kolbe, Kreutzmann, Lobo Ploch, Rass, Ruschel, Weyers
Collection: IEEE Photonics Technology Letters
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Abstract
We report on the degradation of the electro-optical parameters of (In)AlGaN-based ultraviolet-B light-emitting diodes (LEDs) stressed at a constant dc current of 100 mA and the simultaneous change in the depth profile of the hydrogen (H) concentration during operation. The optical power of the LEDs decreased to ~45% of its initial value after 10 h of operation and saturated for longer operation times. In addition, the drive voltage dropped in about the first 10 h of operation and gradually increased in the following operation time. The possible changes in the impurity distribution in the LEDs during operation have been studied by means of secondary-ion-mass spectrometry of the magnesium (Mg) and the H depth profiles after 10 and 100 h of operation. We could not resolve any significant change in the Mg profile. In contrast, after 10 h of operation, the H concentration in the electron-blocking layer (EBL), p-side, and active region significantly reduced, and the H formed two concentration peaks close to the active region and deeper in the n-side. After 100 h, the H concentration in the EBL and p-side did not change, but the H in the n-side propagated further away from the pn junction. A degradation mechanism is proposed, which includes the breaking of atomic bonds of the H-containing defect complexes and the migration of H atoms during operation.
Added by: Sarina  
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